发明名称 LOW NOISE AMPLIFIER
摘要 The present invention relates to a low noise amplifier. According to the present invention, a low noise amplifier is provided, in which a first power is applied to a drain of a transistor and an input signal is applied to a gate. The low noise amplifier includes: a first conductor having a first end connected to a source of the transistor, and a second end connected to a second power lower than the first power; and a second conductor having a first end connected to an input end where the input signal is applied, and a second end connected to the gate of the transistor, wherein the first and second conductors are arranged adjacently parallel with each other, and current flows in the first and second conductors in the same direction. When an inductor is formed in an input matching unit and a source feedback unit, the low noise amplifier simply arranges two metal lines to be adjacent to each other in place of a large inductor element and allows an AC current to flow in the adjacent metal lines in the same direction to magnetically combine the metal lines so as to increase mutual inductance, thereby reducing parasitic resistance components, decreasing a noise factor, reducing the area of the circuit, and lowering production costs.
申请公布号 KR20140123834(A) 申请公布日期 2014.10.23
申请号 KR20130041192 申请日期 2013.04.15
申请人 SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK 发明人 PARK, CHANG KUN;KIM, TAE WON
分类号 H03F1/26;H03F3/60 主分类号 H03F1/26
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