发明名称 |
METHOD FOR DRIVING SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To read multilevel data from a memory cell having a transistor using silicon and a transistor using an oxide semiconductor, without switching a signal for reading the multilevel data in accordance with the number of the levels of the multilevel data.SOLUTION: The bit line is discharged, the voltage of the bit line is charged via a transistor for reading data, and the potential of the bit line which is changed by the charging is read as multilevel data. With such a structure, the potential corresponding to data held in a gate of the transistor can be read by only one-time switching of a signal for reading data.</p> |
申请公布号 |
JP2014199708(A) |
申请公布日期 |
2014.10.23 |
申请号 |
JP20140043446 |
申请日期 |
2014.03.06 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
NAGATSUKA SHUHEI;INOUE HIROKI;ISHIZU TAKAHIKO;MATSUZAKI TAKANORI;SHIONOIRI YUTAKA;KATO KIYOSHI |
分类号 |
G11C11/405;G11C11/56;H01L21/28;H01L21/8242;H01L27/10;H01L27/108;H01L29/417;H01L29/786 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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