WAFER PROCESSING METHOD

摘要

A wafer processing method including a wafer supporting step of attaching a front side of a dicing tape formed of synthetic resin to a back side of a wafer and supporting a peripheral portion of the dicing tape to an annular frame, a dicing tape heating step of heating a back side of the dicing tape attached to the wafer to soften the dicing tape, thereby flattening the back side of the dicing tape, and a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer through the dicing tape from the back side thereof along the division lines in the condition where the focal point of the laser beam is set inside the wafer, thereby forming a modified layer inside the wafer along each division line.

主权项

1. A wafer processing method of dividing a wafer into a plurality of devices along a plurality of division lines, said devices being formed on a front side of said wafer and partitioned by said division lines, said wafer processing method comprising:
a wafer supporting step of attaching a front side of a dicing tape formed of synthetic resin to a back side of said wafer and supporting a peripheral portion of said dicing tape to an annular frame; a dicing tape heating step of heating a back side of said dicing tape attached to said wafer to soften said dicing tape after performing said wafer supporting step, thereby flattening the back side of said dicing tape; and a modified layer forming step of applying a laser beam having a transmission wavelength to said wafer through said dicing tape from the back side thereof along said division lines in a condition where the focal point of said laser beam is set inside said wafer after performing said dicing tape heating step, thereby forming a modified layer inside said wafer along each division line.