发明名称 MULTI SOURCE JFET DEVICE
摘要 <p>The present invention relates to a multisource JFET device. The multisource JFET device according to the present invention includes: a drain region which receives power; a junction gate region which surrounds the drain region; a source region which surrounds the junction gate region and is composed of two or more source terminals to provide an independent current path; and a source terminal separating unit which separates source terminals. The source terminal separating unit separates the source terminals by including a dopant to form the source terminal and a region doped with a different dopant type. According to the present invention, an amount of currents and a current path are variously controlled by the purpose of use through providing several current sources in one JFET device.</p>
申请公布号 KR20140123633(A) 申请公布日期 2014.10.23
申请号 KR20130040395 申请日期 2013.04.12
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 KIM, YOUNG BAE;OH, IN TAEK;LEE, KYUNG HO;KIM, KWANG IL
分类号 H01L29/812;H01L21/338 主分类号 H01L29/812
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