| 发明名称 |
TRENCH PATTERNING WITH BLOCK FIRST SIDEWALL IMAGE TRANSFER |
| 摘要 |
A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure. |
| 申请公布号 |
US2014315380(A1) |
申请公布日期 |
2014.10.23 |
| 申请号 |
US201313866293 |
申请日期 |
2013.04.19 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Kanakasabapathy Sivananda K.;Tseng Chiahsun;Xu Yongan;Yin Yunpeng |
| 分类号 |
H01L21/768;H01L21/308 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask comprising a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure. |
| 地址 |
Armonk NY US |
