发明名称 VAPOR SOURCE, VACUUM VAPOR DEPOSITION APPARATUS AND METHOD OF PRODUCING ORGANIC EL DISPLAY APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a vapor source and a vacuum vapor deposition apparatus which form, at high speed, a metal thin film for an organic EL upper electrode having a uniform film thickness on a large substrate, reduce vapor leakage and temperature decrease of a nozzle and allows long-time continuous operation.SOLUTION: A nozzle 3-4a has a sleeve part 22 which comes in contact with an inner wall so as to be a nest in the inner wall of a crucible 3-2a and a nozzle part provided with a beak-like nozzle hole 3-5a protruding from the tip of the sleeve part 22. At least the sleeve part 22 of the nozzle 3-4a is composed of a material having a thermal expansion coefficient comparable with or a little larger than that of the material of the crucible. The nozzle 3-4a present inside the crucible 3-2a expands to the crucible 3-2a when the temperature of the vapor source is raised in vapor deposition, preventing vapor leakage.</p>
申请公布号 JP2014198863(A) 申请公布日期 2014.10.23
申请号 JP20130074060 申请日期 2013.03.29
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MIYAKE TATSUYA;MATSUURA HIROYASU;MINEKAWA HIDEAKI;OGATA TOMOHIKO;YAMAMOTO KENICHI;KUSUNOKI TOSHIAKI;TAMAKOSHI TAKESHI
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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