SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY

摘要

Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process.

主权项

1. A device structure comprising:
a device region comprised of a first semiconductor material and having a top surface; a Schottky barrier diode having an anode on the top surface of the device region, a cathode in the device region, and a Schottky junction defined between the anode and the cathode; and a guard ring for the Schottky barrier diode, the guard ring is comprised of a second semiconductor material having an epitaxial relationship with the first semiconductor material.