SELF-ALIGNED BORDERLESS CONTACTS USING A PHOTO-PATTERNABLE DIELECTRIC MATERIAL AS A REPLACEMENT CONTACT

摘要

A photo-patternable dielectric material is provided to a structure which includes a substrate having at least one gate structure. The photo-patternable dielectric material is then patterned forming a plurality of sacrificial contact structures adjacent the at least one gate structure. A planarized middle-of-the-line dielectric material is then provided in which an uppermost surface of each of the sacrificial contact structures is exposed. Each of the exposed sacrificial contact structures is then removed providing contact openings within the planarized middle-of-the-line dielectric material. A conductive metal-containing material is formed within each contact opening.

主权项

1. A method of forming a semiconductor structure comprising:
providing at least one gate stack on a surface of a substrate, wherein metal semiconductor alloy portions are located adjacent to the at least one gate stack; forming a photo-patternable dielectric material on said at least one gate stack, said metal semiconductor alloy portions and exposed portions of the substrate; patterning the photo-patternable dielectric material by employing a direct pattern-wise exposure step to provide a sacrificial contact structure located on a surface of at least one of the metal semiconductor alloy portions; forming a planarized middle-of-the-line dielectric material, wherein an uppermost surface of the sacrificial contact structure is exposed; removing the exposed sacrificial contact structure to provide a contact opening; and filling the contact opening with a conductive metal-containing material, wherein said conductive metal-containing material forms a metal contact.