POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A power semiconductor device may include: abase substrate including a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of the drift layer; a second conductive type well layer disposed inside of one surface of the base substrate; a trench formed from one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a depth direction; a first insulation film disposed on a surface of the base substrate; and a first electrode disposed in the trench. A peak point of an impurity doping concentration of the diffusion layer in a transverse direction may be positioned in a region contacting a side surface of the trench.

主权项

1. A power semiconductor device comprising:
a base substrate having one surface and an other surface opposing the one surface and comprising a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of the drift layer; a second conductive type well layer disposed under the one surface of the base substrate; a trench formed from the one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a first direction; an insulation film disposed on the one surface of the base substrate including an inner wall of the trench; and a first electrode disposed in the trench, wherein a peak point of an impurity doping concentration of the diffusion layer in a second direction perpendicular to the first direction is positioned in a region contacting a side surface of the trench.