发明名称 磁気ランダムアクセスメモリ(MRAM)の制御回路、MRAM、及びその制御方法
摘要 <p>A control circuit of a magnetic random access memory is provided with a write command detection unit and an operation control unit. The write command detection unit detects a write command and outputs a first signal for stopping the read operation or write operation of data at the magnetic random access memory macro. The operation control unit, based on the first signal, stops the read operation or write operation at the magnetic random access memory macro, and outputs, to the magnetic random access memory macro, a second signal for beginning a write operation for other data.</p>
申请公布号 JP5610232(B2) 申请公布日期 2014.10.22
申请号 JP20110507127 申请日期 2010.03.25
申请人 发明人
分类号 G11C11/15 主分类号 G11C11/15
代理机构 代理人
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