| 摘要 |
A method and apparatus is used for inspection of devices to detect processing faults on semiconductor wafers. The method includes illuminating a strip of a die along a scan path with a moving measurement spot. The method further includes detecting scattered radiation to obtain an angle-resolved spectrum, and comparing the scattering data with a library of reference spectra. Based on the comparison, the method includes determining the presence of a fault of the die at the strip. The illumination and detection are performed along the scan path across a region, such that the scattering data is spatially integrated over the region. |
