发明名称 導波体を備えるエッジ発光型半導体レーザ
摘要 <p>#CMT# #/CMT# The edge-emitting semiconductor laser has a laser radiation (13) that produces an active layer (3), two waveguides (1,2) and two coating layers (4,5). The active layer is embedded in the former waveguide layer. The latter waveguide is provided adjacent to the latter coating layer, in which no active layer is embedded. A third coating layer (6) is arranged at a side of the latter waveguide, which is averted from the former wave guide. #CMT#USE : #/CMT# Edge-emitting semiconductor laser. #CMT#ADVANTAGE : #/CMT# The edge-emitting semiconductor laser has a laser radiation that produces an active layer, two waveguides and two coating layers, where the active layer is embedded in the former waveguide layer, and hence reduces the heat production in the edge-emitting semiconductor laser. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view of an edge-emitting semiconductor laser. 1,2 : Waveguides 3 : Active layer 4,5,6 : Coating layers 8 : Contact surface 13 : Laser radiation.</p>
申请公布号 JP5611431(B2) 申请公布日期 2014.10.22
申请号 JP20130183113 申请日期 2013.09.04
申请人 发明人
分类号 H01S5/16;H01S5/042;H01S5/20 主分类号 H01S5/16
代理机构 代理人
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