| 摘要 |
<p>The present invention relates to a thin film deposition apparatus, and, more specifically, to a thin film deposition apparatus performing vapor-deposition. Disclosed is the thin film deposition apparatus comprising a process chamber forming a sealed process space; a substrate rotating unit which supports a substrate to make the processed surface of the substrate face the lower side and is installed on the upper side of the process space to rotate the substrate in order to deposit a thin film; and an evaporation source unit which is installed in the process chamber and includes one or more first evaporation sources and one or more second evaporation sources where an identical evaporation substance evaporates. When the radii of the first and second evaporation sources from the center of rotation of the substrate rotated by the substrate rotating unit are first and second radii, respectively, the second radius is larger than the first radius.</p> |
