| 摘要 |
<p>The present invention provides a method of manufacturing a carbon film and a plasma CVD method capable of performing film formation while controlling the temperature of a substrate as well as film properties. A process chamber according to one embodiment of the present invention includes a holder configured to hold a substrate, magnetic-field producing means configured to produce magnetic fields inside the process chamber, shields configured to suppress film deposition on the magnetic-field producing means, heat dissipating sheets configured to suppress heating of the magnetic-field producing means, and moving means configured to move the magnetic-field producing means. The magnetic-field producing means is characterized in being moved in such a direction as to increase or decrease the volume of a space between the magnetic-field producing means and the holder.</p> |
