| 摘要 |
A disclosed surface-emitting laser element includes a lower DBR formed on a substrate, an active layer formed on the lower DBR, an upper DBR formed on the active layer, a wavelength-adjusting layer formed above the active layer, and a plurality of surface-emitting lasers configured to emit respective laser beams having different wavelengths by changing a thickness of the wavelength-adjusting layer. In the surface-emitting laser element, the wavelength-adjusting layer includes one of a first film having alternately layered GaInP and GaAsP and a second film having alternately layered GaInP and GaAs, the thickness of the wavelength-adjusting layer being changed by partially removing each of the alternating layers of a corresponding one of the first and second films. |
