| 发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate. |
| 申请公布号 |
KR20140123482(A) |
申请公布日期 |
2014.10.22 |
| 申请号 |
KR20147018323 |
申请日期 |
2013.01.08 |
| 申请人 |
SONY CORPORATION |
发明人 |
FUJII NOBUTOSHI;AOYAGI KENICHI;HAGIMOTO YOSHIYA;IWAMOTO HAYATO |
| 分类号 |
H01L27/14;H01L21/02;H01L21/56;H01L21/58;H01L25/065;H01L25/07;H01L25/18;H01L27/00;H01L27/146 |
主分类号 |
H01L27/14 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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