| 发明名称 | N-type contact electrode formed on an N-type semiconductor layer and method of forming same using a second metal electrode layer heat-treated after being formed on a first, heat-treated metal electrode layer | ||
| 摘要 | A method for forming an n-type contact electrode, which includes an n-type nitride semiconductor such as AlxInyGazN (with x, y, and z being rational numbers that sum to 1.0 and fulfill the relations 0<x≦1.0, 0≦y≦0.1, and 0≦z<1.0), includes: a step in which a first electrode metal layer including at least one metal selected from titanium, vanadium, and tantalum is formed on a layer of the aforementioned n-type semiconductor and then heat-treated at a temperature between 800° C. and 1200° C.; and a step in which a second electrode metal layer is formed on top of the first electrode metal layer and then heat-treated at a temperature between 700° C. and 1000° C. The second electrode metal layer contains a layer comprising a metal, such as aluminum, that has a work function between 4.0 and 4.8 eV and a resistivity between 1.5×10−6 Ω·cm and 4.0×10−6 Ω·cm. | ||
| 申请公布号 | US8865591(B2) | 申请公布日期 | 2014.10.21 |
| 申请号 | US201013517260 | 申请日期 | 2010.12.22 |
| 申请人 | Tokuyama Corporation | 发明人 | Tamari Naoki;Kinoshita Toru |
| 分类号 | H01L21/44;H01L29/45;H01L21/285;H01L33/32;H01L33/40;H01L29/20;H01S5/042;H01S5/323 | 主分类号 | H01L21/44 |
| 代理机构 | Cahn & Samuels, LLP | 代理人 | Cahn & Samuels, LLP |
| 主权项 | 1. A method for forming a n-type contact electrode on a n-type semiconductor layer of a group III nitride single crystal, wherein said method comprises; carrying out a heat treatment at a temperature of 800° C. or higher and 1200° C. or less after forming a first electrode metal layer comprising a metal layer of at least one selected from a group consisting of Ti, V, and Ta on said n-type semiconductor layer, and carrying out a heat treatment at a temperature of 700° C. or higher and 1000° C. or less after forming a second electrode metal layer including a highly conductive metal layer of metals having a work function of 4.0 eV to 4.8 eV, and a specific resistance of 1.5×10−6 Ω·cm to 4.0×10−6 Ω·cm on said first electrode metal layer. | ||
| 地址 | Yamaguchi JP | ||