发明名称 Boosting transistor performance with non-rectangular channels
摘要 Roughly described, the invention includes layouts and masks for an integrated circuit, in which the diffusion shape for a transistor includes a transversely extending jog on one or both transversely opposite sides, the jog having inner and outer corners, at least one of which is located relative to the gate conductor longitudinally such that during lithographic printing of the diffusion shape onto the integrated circuit, the corner will round and extend at least partly into the channel region. The invention also includes aspects for a system and method for introducing such jogs, and for an integrated circuit device having a non-rectangular channel region, the channel region being wider where it meets the source region than at some other longitudinal position under the gate.
申请公布号 US8869078(B2) 申请公布日期 2014.10.21
申请号 US201414249129 申请日期 2014.04.09
申请人 Synopsys, Inc. 发明人 Moroz Victor;Choi Munkang;Lin Xi-Wei
分类号 G06F17/50 主分类号 G06F17/50
代理机构 Haynes Beffel & Wolfeld LLP 代理人 Haynes Beffel & Wolfeld LLP ;Wolfeld Warren S.
主权项 1. A system for revising a layout of a circuit design, for use in forming a set of lithographic reticles for use in fabricating an integrated circuit, comprising: a memory, and a data processor coupled to the memory, the data processor configured to perform the steps of: identifying, in a provided first layout of a circuit design, a subject transistor having shapes for defining on the integrated circuit source and drain diffusion regions and a gate conductor overlying a channel region, for which the source diffusion region is no wider than the drain diffusion region where they respectively meet the channel region, the first layout including a first shape for defining at least the source diffusion region of the subject transistor, and a second shape for defining at least the gate conductor of the subject transistor, the first shape having transversely opposite first and second longitudinal sides along the length of the diffusion regions, the corner of the first shape which is on the first longitudinal side thereof, and which is on the same side of the gate conductor longitudinally as is the source diffusion region, and which is located nearest to the gate conductor longitudinally, being sufficiently spaced from the gate conductor longitudinally such that any corner rounding introduced during lithographic printing of the first shape onto the integrated circuit will not extend into the channel region;revising the first layout by adding a first transversely extending protrusion to the first shape on the first longitudinal side thereof, the first protrusion having at least a portion which is on the same side of the gate conductor longitudinally as is the source diffusion region, the first protrusion having an inner corner located relative to the gate conductor longitudinally such that during lithographic printing of the first protrusion onto the integrated circuit, the inner corner will round and extend at least partly within the channel region, the gate conductor being closer in the revised layout to the inner corner of the first protrusion than to any corner of the drain diffusion region; andproviding for making a set of lithographic reticles, a layout in dependence upon the revised layout.
地址 Mountain View CA US
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