Semiconductor devices and methods of manufacture thereof

摘要

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.

主权项

1. A device comprising:
a channel region in a substrate; a gate structure on the substrate over the channel region; source and drain regions in the substrate on opposing sides of the channel region, the source and drain regions comprising:
a first conformal liner having a first material composition along bottom surface of the source and drain regions;a second conformal liner having a second material composition on sidewalls of the source and drain regions;a silicon-containing material adjoining the first and second conformal liners; anda carbon-containing material disposed on the silicon-containing material.