Multi-direction wiring for replacement gate lines

摘要

A post-planarization recess etch process is employed in combination with a replacement gate scheme to enable formation of multi-directional wiring in gate electrode lines. After formation of disposable gate structures and a planarized dielectric layer, a trench extending between two disposable gate structures are formed by a combination of lithographic methods and an anisotropic etch. End portions of the trench overlap with the two disposable gate structures. After removal of the disposable gate structures, replacement gate structures are formed in gate cavities and the trench simultaneously. A contiguous gate level structure can be formed which include portions that extend along different horizontal directions.

主权项

1. A method of forming a semiconductor structure comprising:
forming at least one semiconductor material portion on a substrate; forming at least one disposable gate structure over said at least one semiconductor material portion; forming a planarization dielectric layer over said at least one semiconductor material portion and said at least one disposable gate structure; forming a trench in said planarization dielectric layer, wherein a sidewall of a remaining portion of one of said at least one disposable gate structure is physically exposed within said trench; forming at least one gate cavity by removing said at least one disposable gate structure; and forming a replacement gate stack structure in said at least one gate cavity and said trench.