发明名称 High density interconnect device and method
摘要 Embodiments that allow both high density and low density interconnection between microelectronic die and motherboard via Direct Chip Attach (DCA) are described. In some embodiments, microelectronic die have a high density interconnect with a small bump pitch located along one edge and a lower density connection region with a larger bump pitch located in other regions of the die. The high density interconnect regions between die are interconnected using an interconnecting bridge made out of a material that can support high density interconnect manufactured into it, such as silicon. The lower density connection regions are used to attach interconnected die directly to a board using DCA. The high density interconnect can utilize current Controlled Collapsed Chip Connection (C4) spacing when interconnecting die with an interconnecting bridge, while allowing much larger spacing on circuit boards.
申请公布号 US8866308(B2) 申请公布日期 2014.10.21
申请号 US201213722128 申请日期 2012.12.20
申请人 Intel Corporation 发明人 Roy Mihir K;Manusharow Mathew J
分类号 H01L23/48;H01L21/00;H01L21/50 主分类号 H01L23/48
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A system comprising; a System on Chip (SOC) die having a first die edge and first die surface, the SOC die comprising: a first die high density interconnect located adjacent to the first die edge on the first die surface, the first die high density interconnect having a first bump pitch; and a first die connection region located on the first die surface, the first die connection region having a second bump pitch; and a memory die having a second die edge and a second die surface, the memory die comprising: a second die high density interconnect located adjacent to the second die edge on the second die surface, the second die high density interconnect having the first bump pitch; and a second die connection region located on the second die surface, the second die connection region having a third bump pitch; and a bridge having a plurality of high density interconnects having the first bump pitch, one of the plurality of high density interconnects connected to the first die high density interconnect and another of the plurality of high density interconnects connected to the second die high density interconnect.
地址 Santa Clara CA US
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