Solid-state imaging element having optical waveguide with insulating layer

摘要

The present invention provides a solid-state imaging element including: a silicon layer having a photodiode formed therein and a positive charge accumulation region formed on the surface thereof; and an optical waveguide formed above the photodiode to guide incident light into the photodiode, wherein an insulating layer is formed in the optical waveguide, and the insulating layer has a dielectric constant of 5 or greater and negative fixed charge.

主权项

1. A solid-state imaging element comprising:
a silicon layer comprising a photodiode formed therein and a positive charge accumulation region formed at a surface thereof; a plurality of interlayer insulating layers on the silicon layer, wherein each interlayer insulating layer is associated with a wiring layer; a gate electrode; a conductive plug layer, wherein the conductive plug layer penetrates at least one of the plurality of interlayer insulating layers, and wherein the conductive plug layer electrically connects the wiring layer and the gate electrode; and an optical waveguide formed above the photodiode to guide incident light into the photodiode, wherein:
the optical waveguide penetrates the plurality of interlayer insulating layers,the optical waveguide is formed entirely with an insulating layer having a negative fixed charge,the optical waveguide is formed having a light-incident side and a non-light-incident side, andthe non-light-incident side formed directly in contact with the positive charge accumulation region.