Semiconductor device and method for manufacturing the same

摘要

It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first conductive layer; forming an organic compound layer comprising an insulator over the first conductive layer; and forming a second conductive layer over the organic compound layer, wherein the organic compound layer comprises a plurality of insulating particles dispersed in the organic compound layer.