Integrated visible and infrared imager devices and associated methods

摘要

Semiconductor devices having three dimensional (3D) architectures and methods form making such devices are provided. In one aspect, for example, a method for making a semiconductor device can include forming a device layer on a front side of a semiconductor layer that is substantially defect free, bonding a carrier substrate to the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a smart substrate to the processed surface. In some aspects, the method can also include removing the carrier substrate from the semiconductor layer to expose the device layer.

主权项

1. A method for making a semiconductor device, comprising:
forming a device layer on a front side of a semiconductor layer, wherein the semiconductor layer is at least substantially defect free; bonding a carrier substrate to the device layer; processing the semiconductor layer on a back side opposite the device layer to form a processed surface; and coupling a bolometer to the processed surface.