Semiconductor arrangement with active drift zone

摘要

A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.

主权项

1. A semiconductor device arrangement, comprising:
a first semiconductor device having a load path; a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal; wherein the second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device; wherein each but one of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and wherein one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device; wherein each of the second semiconductor devices has at least one device characteristic; and wherein at least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.