Inductor device and fabrication method

摘要

Various embodiments provide inductor devices and fabrication methods. In one embodiment, an inductor device can include a first dielectric layer disposed on a semiconductor substrate; a first planar spiral wiring disposed on the first dielectric layer, and optionally one or more second planar spiral wirings disposed over the first planar spiral wiring. Each of the first and the optional second planar spiral wirings can include a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring. The second spiral metal wiring can include at least two sub-metal-lines isolated with one another.

主权项

1. An inductor device comprising:
a semiconductor substrate; a dielectric layer disposed on the semiconductor substrate; a planar spiral wiring disposed on the dielectric layer, the planar spiral wiring including a first spiral metal wiring and a second spiral metal wiring connected to a first end of the first spiral metal wiring, wherein the second spiral metal wiring includes at least two sub-metal-lines isolated with one another; a first contact layer disposed on the dielectric layer and connected to a second end of the first spiral metal wiring; and a second contact layer coupled to only at an end of the second spiral metal wiring, such that the at least two isolated sub-metal-lines of the second spiral metal wiring are in a parallel configuration between the second contact layer and the first spiral metal wiring, wherein, in a same planar layer, the first spiral metal wiring and, the second spiral metal wiring including the parallel configuration of the at least two isolated sub-metal-lines, are configured in series between the first contact layer and the second contact layer.