Morphology control of ultra-thin MeOx layer

摘要

A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

主权项

1. A nonvolatile memory element, comprising:
a first layer on a substrate; a resistive switching layer on the first layer; a second layer; wherein the resistive switching layer is disposed between the first layer and the second layer, and wherein the resistive switching layer comprises a material having the same morphology as a top surface of the first layer; a first sub-layer that comprises the material having the same morphology as a top surface of the first layer; and a second sub-layer comprising a material having a morphology that is different than the first sub-layer and the first layer, wherein the first layer and the first sub-layer each have a polycrystalline morphology and the second sub-layer has a crystalline morphology.