| 摘要 |
<p>A light emitting device according to an embodiment includes a light emitting structure which includes a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the active layer; a first electrode which is electrically connected to the first conductivity-type semiconductor layer; a second electrode which is electrically connected to the second conductivity-type semiconductor layer. The upper region of the light emitting structure includes a photonic crystal layer formed by the second conductivity-type semiconductor layer and an oxide layer.</p> |
