Semiconductor structure for an electrostatic discharge protection circuit

摘要

An embodiment of a semiconductor structure for an electrostatic discharge (“ESD”) protection circuit is disclosed. For this embodiment, there is a substrate of a first polarity type. A device area of the substrate has a source region and a drain region of a transistor. The device area is of the first polarity type, and the source region and the drain region are each of a second polarity type. A well region of the second polarity type surrounds the device area. An outer tap of the first polarity type surrounds the well region, and a bridge interconnects the source region and the outer tap.

主权项

1. A semiconductor structure for an electrostatic discharge (“ESD”) protection circuit, comprising:
a substrate of a first polarity type; a device area of the substrate having a source region and a drain region of a transistor; wherein the device area is of the first polarity type; wherein the source region and the drain region are each of a second polarity type; a well region of the second polarity type surrounding the device area; an outer tap of the first polarity type surrounding the well region; anda bridge interconnecting the source region and the outer tap.