METHOD OF PRODUCING A THROUGH-SUBSTRATE VIA IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE COMPRISING A THROUGH-SUBSTRATE VIA

摘要

The method comprises the steps of arranging an intermetal dielectric (2) on or above a main surface (10) of a semiconductor body (1) and at least one metal layer (5, 5') in the intermetal dielectric, and forming a via opening (3) from a rear surface (11) towards the metal layer. A stop layer (4) of electrically conductive material is arranged at the metal layer between the metal layer and the semiconductor body, and the via opening is formed at least up to the stop layer but not into the metal layer. The semiconductor device has a stop layer (4) between a section (5) of the metal layer and a metallization (19) of a through-substrate via that is arranged in the via opening, and an electrically conductive liner (6, 6') between the metal layer and the semiconductor body.