发明名称 |
FILM FORMING METHOD AND FILM FORMING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method capable of forming a metal oxide film with good in-plain uniformity even when concentration of an oxidant gas for oxidizing metal is increased to strengthen oxidation power of the oxidant gas.SOLUTION: A film forming method comprises: a step (1) of supplying a film forming material gas into a processing chamber; a step (2) of removing the gas remaining in the processing chamber by exhausting the inside of the processing chamber and/or supplying a purge gas into the processing chamber after the step (1); a step (3) of supplying an oxidant gas into the processing chamber; and a step (4) of removing the gas remaining in the processing chamber by exhausting the inside of the processing chamber and/or supplying a purge gas into the processing chamber after the step (3). The step (3) further includes: a first supply step (5) of supplying the oxidant gas at a first concentration; and a second supply step (6) of supplying the oxidant gas at a second concentration higher than the first concentration. |
申请公布号 |
JP2014197636(A) |
申请公布日期 |
2014.10.16 |
申请号 |
JP20130073125 |
申请日期 |
2013.03.29 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
SHIMIZU AKIRA;TSUNATORI TSUYOSHI;NAKAJIMA SHIGERU |
分类号 |
H01L21/316;C23C16/40;C23C16/44;C23C16/455;H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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