| 摘要 |
PROBLEM TO BE SOLVED: To form a high-quality concavo-convex pattern in a protective film formed on a substrate which has a recessed portion on a back surface.SOLUTION: A method for etching a protective film 11 is provided, which comprises preparing a substrate 10 having the protective film 11 formed on a top surface thereof and having a recessed portion 13 on a back surface on the opposite side to the top surface; forming a resist pattern 12 on the protective film 11; and etching the protective film 11 by use of plasma through the resist pattern 12 as a mask while applying a bias voltage. The bias voltage is increased in accordance with an aspect of reduction in a relative dielectric constant of a region R2 of the substrate 10 that corresponds to a coated region R1 of the top surface where the protective film 11 is present. |
