发明名称 MAGNETRON SPUTTERING CATHODE, SPUTTERING APPARATUS INCLUDING THE CATHODE, SPUTTERING FILM DEPOSITION METHOD USING THE SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering cathode which provides small variation in film thickness in sputtering deposition and improves utilization efficiency of a target.SOLUTION: A magnetron sputtering cathode 10 includes a magnetic field generating mechanism which includes a rectangular-ring shaped outer magnetic pole 18 provided corresponding to a peripheral part of a rectangular-shaped sputtering target 11, and a central magnetic pole 19 disposed in an inner side of the outer magnetic pole 18 so as to extend in a long side direction of the outer magnetic pole 18. The central magnetic pole 19 freely reciprocates in a short side direction of the outer magnetic pole 18, and the outer magnetic pole 18 freely reciprocates in the long side direction thereof.
申请公布号 JP2014196529(A) 申请公布日期 2014.10.16
申请号 JP20130071986 申请日期 2013.03.29
申请人 SUMITOMO METAL MINING CO LTD 发明人 WATANABE HIROTO
分类号 C23C14/35 主分类号 C23C14/35
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