发明名称 |
MAGNETRON SPUTTERING CATHODE, SPUTTERING APPARATUS INCLUDING THE CATHODE, SPUTTERING FILM DEPOSITION METHOD USING THE SPUTTERING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a magnetron sputtering cathode which provides small variation in film thickness in sputtering deposition and improves utilization efficiency of a target.SOLUTION: A magnetron sputtering cathode 10 includes a magnetic field generating mechanism which includes a rectangular-ring shaped outer magnetic pole 18 provided corresponding to a peripheral part of a rectangular-shaped sputtering target 11, and a central magnetic pole 19 disposed in an inner side of the outer magnetic pole 18 so as to extend in a long side direction of the outer magnetic pole 18. The central magnetic pole 19 freely reciprocates in a short side direction of the outer magnetic pole 18, and the outer magnetic pole 18 freely reciprocates in the long side direction thereof. |
申请公布号 |
JP2014196529(A) |
申请公布日期 |
2014.10.16 |
申请号 |
JP20130071986 |
申请日期 |
2013.03.29 |
申请人 |
SUMITOMO METAL MINING CO LTD |
发明人 |
WATANABE HIROTO |
分类号 |
C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|