| 摘要 |
A method for forming a crystalline film of a material is provided, including depositing a solution, having a base critical speed separating deposition regimes, on a substrate such that a crystalline film is formed. The solution is deposited at a speed greater than the base critical speed and the crystalline film has a crystal structure characteristic of a crystalline film formed from the solution at a speed less than the base critical speed. In another aspect, a crystalline film is formed on a base film by depositing a solution on the base film. The solution has a critical speed between deposition regimes, and the solution is deposited at a speed greater than or equal to the critical speed, such that a crystalline film is formed on the base film. A device is disclosed, the device having a film made from any of the disclosed methods and an electrical lead. |
