SOLID-STATE IMAGING ELEMENT

摘要

Provided is a solid-state imaging element for effectively reducing a dark current. The solid-state imaging element includes a substrate 10 formed of semiconductor and having a plurality of pixel regions, a plurality of storage units 11 arranged in the respective pixel regions in the substrate 10, formed of semiconductor having a conductivity type opposite to the substrate 10, and configured to store a charge having a first polarity and generated by photoelectric conversion, and a fixed charge layer 14a provided above at least one substrate surface 102 and having a first fixed charge E. A density of accumulation charges h having a polarity opposite to the first fixed charge E in the substrate surface 102 varies based on an arrangement of the pixel regions or an arrangement of the storage units, with respect to a direction parallel to the substrate surface 102.

主权项

1. A solid-state imaging element comprising:
a substrate formed of semiconductor and having a plurality of pixel regions; a storage unit arranged in the substrate with respect to each of the pixel regions, formed of semiconductor having a conductivity type opposite to the substrate, and configured to store a charge having a first polarity and generated by photoelectric conversion; and a fixed charge layer provided above at least one substrate surface and having a first fixed charge, wherein a density of accumulation charges provided in the substrate surface and having a polarity opposite to the first fixed charge varies based on an arrangement of the pixel regions or an arrangement of the storage unit, with respect to a direction parallel to the substrate surface, the density of the accumulation charges in the substrate surface becomes low in a region getting close to the storage unit, and becomes high in a region getting away from the storage unit, with respect to the direction parallel to the substrate surface.