| 摘要 |
<p>This nitride semiconductor device is provided with a substrate (10), a nitride semiconductor laminated body (1, 2), and an electrode metal layer (13). The electrode metal layer (13) is bonded to the nitride semiconductor laminated body (1, 2), and includes a first metal layer (24) having a fine columnar structure including a plurality of column sections (A), and a second metal layer (25), which is laminated on the first metal layer (24), and which has a fine columnar structure including a plurality of column sections (B). The average size of the column sections (B) of the fine columnar structure of the second metal layer (25), said average size being in the diameter direction of the column sections (B), is larger than the average size of the column sections (A) of the fine columnar structure of the first metal layer (24), said average size being in the diameter direction of the column sections (A).</p> |
