GRAPHENE DEVICE, AND METHOD OF FABRICATING THE SAME

摘要

Disclosed are a graphene device and a manufacturing method thereof. The disclosed graphene device includes a semiconductor substrate, a graphene layer which is arranged on one region of the semiconductor substrate, a first electrode which is formed on a first region of the graphene layer, a second electrode which is formed on a second region of the graphene layer, an insulation layer which is interposed between the graphene layer and the second electrode, and a third electrode which is formed on a third region without the graphene layer on the semiconductor substrate. The semiconductor substrate includes a large Schottky barrier in the application of a voltage to the second electrode in comparison with the non-application of the voltage to the second electrode by the junction of the first electrode, the graphene layer, and the semiconductor substrate.