发明名称 |
TURN-OFF OVERVOLTAGE LIMITING FOR IGBT |
摘要 |
A turn-off overvoltage limiting for IGBT is described herein. The injection of a sample of the overvoltage across the IGBT in the gate drive to slow down the slope of the gate voltage decrease only during the overvoltage above a predetermined value is described herein. Techniques to increase the parasitic inductance to allow the control to limit an overvoltage at turn off of the second IGBT are also described herein. |
申请公布号 |
EP2789092(A1) |
申请公布日期 |
2014.10.15 |
申请号 |
EP20120856190 |
申请日期 |
2012.12.05 |
申请人 |
TM4 INC. |
发明人 |
CYR, JEAN-MARC;EL YACOUBI, MAALAININE;AMAR, MOHAMMED;FLEURY, PASCAL |
分类号 |
H02M7/217;H02M1/00;H02M1/08;H02M1/32;H02M7/537;H03K17/082;H03K17/16;H03K17/60 |
主分类号 |
H02M7/217 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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