发明名称 |
Process for producing indium oxide-containing layers |
摘要 |
The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof. |
申请公布号 |
US8859332(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201113884495 |
申请日期 |
2011.10.26 |
申请人 |
Evonik Degussa GmbH |
发明人 |
Steiger Juergen;Pham Duy Vu;Thiem Heiko;Merkulov Alexey;Hoppe Arne |
分类号 |
H01L21/16;H01L29/10;H01L21/12;B05D5/12;H01L21/288;H01L29/22;C23C18/12;H01L21/02;H01L29/43 |
主分类号 |
H01L21/16 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A liquid phase process for producing an indium oxide-comprising layer, the process comprising:
a) applying a coating composition to a substrate, b) subsequently irradiating the coating composition with electromagnetic radiation, c) then optionally drying the coating composition, and d) finally thermally converting the coating composition into the indium oxide-comprising layer, wherein the coating composition is prepared by a process comprising: mixing at least one indium oxide precursor with at least one solvent, a dispersion medium, or both;
the at least one indium oxide precursor is an indium halogen alkoxide of formula InX(OR)2, wherein
R is an alkyl radical, an alkoxyalkyl radical, or both, andX is F, Cl, Br or I; andthe electromagnetic radiation is carried out with significant fractions of radiation in ranges of 170-210 nm and 250-258 nm. |
地址 |
Essen DE |