| 发明名称 | Photomask having patterns for EUV light and DUV light | ||
| 摘要 | A photomask, including a photomask substrate, a reflective layer on a front surface of a first region of the photomask substrate, the reflective layer being configured to reflect an EUV light, an absorbing pattern on the reflective layer, the absorbing pattern being configured to absorb the EUV light, and an opaque pattern directly on a front surface of a second region of the photomask substrate, the opaque pattern being configured to block a DUV light. | ||
| 申请公布号 | US8859169(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US201313757917 | 申请日期 | 2013.02.04 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Lee Seung-Yoon |
| 分类号 | G03F1/24;G03F1/22 | 主分类号 | G03F1/24 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A photomask, comprising: a photomask substrate; a reflective layer for reflecting an EUV light, the reflective layer being on a front surface of a first region of the photomask substrate; an absorbing pattern for absorbing the EUV light, the absorbing pattern being on the reflective layer; and an opaque pattern for blocking a DUV light, the opaque pattern being directly on a front surface of a second region of the photomask substrate. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||