发明名称 |
Method for producing nickel-containing films |
摘要 |
Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by formula (I):;
wherein R1 is t-butyl and each R2 is each independently any C1-C3 alkyl group; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface. |
申请公布号 |
US8859045(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201213555832 |
申请日期 |
2012.07.23 |
申请人 |
Applied Materials, Inc. |
发明人 |
Knapp David;Thompson David |
分类号 |
C07F17/00;C23C16/18;C07F15/04 |
主分类号 |
C07F17/00 |
代理机构 |
Servilla Whitney LLC |
代理人 |
Servilla Whitney LLC |
主权项 |
1. A method of depositing a film consisting essentially of nickel, the method comprising:
providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by: wherein R1 is t-butyl and each R2 is each independently any C1-C3 alkyl group; exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface. |
地址 |
Santa Clara CA US |