发明名称 Method for producing nickel-containing films
摘要 Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by formula (I):; wherein R1 is t-butyl and each R2 is each independently any C1-C3 alkyl group; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.
申请公布号 US8859045(B2) 申请公布日期 2014.10.14
申请号 US201213555832 申请日期 2012.07.23
申请人 Applied Materials, Inc. 发明人 Knapp David;Thompson David
分类号 C07F17/00;C23C16/18;C07F15/04 主分类号 C07F17/00
代理机构 Servilla Whitney LLC 代理人 Servilla Whitney LLC
主权项 1. A method of depositing a film consisting essentially of nickel, the method comprising: providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by: wherein R1 is t-butyl and each R2 is each independently any C1-C3 alkyl group; exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.
地址 Santa Clara CA US
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