Semiconductor light-emitting device

摘要

A reliable semiconductor light-emitting device can include a wavelength converting material in a cavity mounting at least one semiconductor light-emitting chip. The device can also include an encapsulating resin to cover the wavelength converting material so as to emit a wavelength-converted light using light emitted from the chip. The wavelength converting material should include a transparent resin having a large thermal expansion coefficient to maintain a high thermal resistance, and the encapsulating resin is subject to cracks due to a high transparent resin. The semiconductor device can be configured to form a space between the wavelength converting material and the encapsulating resin so that each of the encapsulating resin and the wavelength converting material cannot contact with each other even under a high temperature. Thus, the disclosed subject matter cannot stress in the encapsulating resin when the wavelength converting material expands, and therefore can provide the reliable semiconductor light-emitting device.

主权项

1. A semiconductor light-emitting device including an optical axis comprising:
a base board including a first board and a second board having a top surface, and being formed in a substantially rectangular tabular shape, the first board having a top surface and a through hole, including a first conductor pattern having an inner top edge adjacent the through hole, and the first board including at least one first bonding conductor pattern formed on the top surface of the first board, the base board attaching the first board on the top surface of second board, and thereby the through hole of the first board being configured to form a cavity along with a part of the top surface of the second board in the base board, the cavity of the base board being provided with a bottom surface of the cavity by using the part of the top surface of the second board exposed from the first board, and the cavity including a center on the bottom surface of the cavity, and the base board further including at least one second bonding conductor pattern formed on at least one of the top surface of the first board and the top surface of the second hoard, wherein the optical axis of the semiconductor light-emitting device intersects with the center on the bottom surface of the cavity at a substantially right angle; at least one semiconductor light-emitting chip having a top surface, a bottom surface, a first electrode formed on the top surface and a second electrode, and mounted substantially on the bottom surface of the cavity, the top surface of the semiconductor light-emitting chip including a center on the top surface, and the first electrode of the semiconductor light-mitting chip being electrically connected to the first bonding conductor pattern via a first bonding wire; a wavelength converting material having a top surface made by mixing at least a phosphor with a first transparent resin having a thermal expansion coefficient, encapsulating the at least one semiconductor light-emitting chip and a part of the first bonding wire in the cavity, and the top surface of the wavelength converting material banking from the inner top edge of the first conductor pattern of the first board toward the first bonding wire; and an encapsulating resin being composed of a second transparent resin having a thermal expansion coefficient, encapsulating another part of the first bonding wire, which is not encapsulated by the wavelength converting material, and covering the wavelength converting material, wherein the encapsulating resin and the wavelength converting material contacts with each other substantially between the part and the other part of the first bonding wire, and therefore the semiconductor light-emitting device is configured to form a space between the encapsulating resin and the top surface of the wavelength converting material at least by using said bank from the inner top edge of the first conductor pattern of the first board toward the first bonding wire.