Method of fabricating high efficiency CIGS solar cells

摘要

A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

主权项

1. A method for forming a semiconductor material on a substrate, the method comprising:
forming a metal precursor film, wherein forming the metal precursor film comprises:
i. forming a first layer above a surface of the substrate, wherein the first layer comprises Cu and Ga, and wherein the first layer is formed using a sputtering process from a sputtering target comprising between about 25 atomic % Ga and about 66 atomic % Ga;ii. forming a second layer above the first layer, wherein the second layer comprises In;iii. forming a third layer above the second layer, wherein the third layer comprises Cu; and heating the metal precursor film in the presence of a chalcogen at a temperature between 100 C and 700 C.