Method for growing a nitride-based III-V group compound semiconductor

摘要

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

主权项

1. A method for manufacturing a light-emitting diode, said method comprising:
providing a substrate having a plurality of protruded portions and a plurality of recess portions on a surface of the substrate, each protruded portion being made of a material different from that of said substrate, each recess portion being defined as space between a respective pair of the plurality of protruded portions; growing a first nitride-based III-V Group compound semiconductor layer from a combination of a plurality of micronuclei on the surface of said substrate within each recess portion until said first nitride-based III-V Group semiconductor layer forms a triangle in cross section between each pair of adjacent protruded portions; lowering a V/III ratio of starting materials for growing said first nitride based III-V Group compound semiconductor layer and increasing a growth temperature to laterally grow said first nitride-based III-V Group compound semiconductor layer between each respective pair of the plurality of protruded portions such that a dislocation includes a bent portion, the bent portion having (a) a first portion that propagates from a respective micronuclei in a direction that intersects a plane of the one main surface and (b) a second portion that extends from the first portion in a direction parallel to the plane of the one main surface; and successively growing a second nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a third nitride-based III-V compound semiconductor layer of a second conduction type on said first nitride-based III-V Group compound semiconductor layer.