发明名称 Organic light emitting diode and method of fabricating the same
摘要 Provided are an organic light emitting diode and a method of fabricating the same. The organic light emitting diode may include a light-scattering layer, a first electrode, an organic light-emitting layer, and a second electrode, which are sequentially stacked on a substrate, wherein the light-scattering layer may include uneven shaped nanostructures having irregular width and spacing. The method of fabricating the organic light emitting diode may include sequentially stacking a light-scattering medium layer and a metal alloy layer on a substrate, heat treating the metal alloy layer to form etching mask patterns, etching the light-scattering medium layer by using the etching mask patterns to form a light-scattering layer, removing the etching mask patterns, and forming a planarizing layer on the light-scattering layer.
申请公布号 US8859309(B2) 申请公布日期 2014.10.14
申请号 US201314025396 申请日期 2013.09.12
申请人 Electronics and Telecommunications Research Institute 发明人 Shin Jin Wook
分类号 H01L21/00;H01L51/00;H01L51/56;H01L51/52 主分类号 H01L21/00
代理机构 Rabin & Berdo, P.C. 代理人 Rabin & Berdo, P.C.
主权项 1. A method of fabricating an organic light emitting diode, the method comprising: sequentially stacking a light-scattering medium layer and a metal alloy layer on a substrate; heat treating the metal alloy layer to form etching mask patterns; etching the light-scattering medium layer by using the etching mask patterns to form a light-scattering layer; and removing the etching mask patterns.
地址 Daejeon KR