发明名称 Semiconductor device arrangement comprising a semiconductor device with a drift region and a drift control region
摘要 A semiconductor device includes a source region, a drain region, a body region, and a drift region. The drift region is arranged between the body and the drain and the body is arranged between the source and the drift region in a semiconductor body. A gate electrode is adjacent the body and dielectrically insulated from the body by a gate dielectric. A drift control region is adjacent the drift region and dielectrically insulated from the drift region by a drift control region dielectric. A drain electrode adjoins the drain. The device also includes an injection control region of the same doping type as the drain, but more lowly doped. The injection control region adjoins the drift control region dielectric, extends in a first direction along the drift control region, and adjoins the drain in the first direction and an injection region in a second direction different from the first direction.
申请公布号 US8860132(B2) 申请公布日期 2014.10.14
申请号 US201113307545 申请日期 2011.11.30
申请人 Infineon Technologies Austria AG 发明人 Hirler Franz
分类号 H01L29/66 主分类号 H01L29/66
代理机构 Murphy, Bilak & Homiller, PLLC 代理人 Murphy, Bilak & Homiller, PLLC
主权项 1. A semiconductor device arrangement comprising a semiconductor device, the semiconductor device comprising: a source region, a drain region, a body region, and a drift region, the drift region arranged between the body region and the drain region and the body region arranged between the source region and the drift region in a semiconductor body; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; a drift control region adjacent the drift region and dielectrically insulated from the drift region by a drift control region dielectric; an injection region of a doping type complementary to the doping type of the drain region, the entire injection region being arranged on an opposite side of the drift control region dielectric as the drift control region; a drain electrode adjoining the drain region; and an injection control region of the same doping type as the drain region but more lowly doped, wherein the injection control region adjoins the drift control region dielectric, extends in a first direction along the drift control region, and adjoins the drain region in the first direction and the injection region in a second direction different from the first direction.
地址 Villach AT