Method of forming wiring of a semiconductor device

摘要

A method of forming wiring of a semiconductor device includes: forming an insulating resin on a main surface of a substrate such that an opening portion defining a wiring pattern is provided in the insulating resin; forming a first wiring layer made of a first metal on a bottom surface and side surfaces of the opening portion surrounding and a surface of the insulating resin opposite to the main surface of the substrate, the first wiring layer having a bottom portion formed on the bottom surface of the opening portion and side portions formed on the side surfaces, the bottom portion having a thickness greater than a thickness of at least one of the side portions; and cutting the insulating resin and the first wiring layer such that the insulating resin and the first wiring layer are exposed.

主权项

1. A method of forming wiring of a semiconductor device, comprising:
forming an insulating resin on a main surface of a substrate such that an opening portion defining a wiring pattern is provided in the insulating resin, the opening portion exposing the main surface of the substrate and having a bottom surface and side surfaces surrounding the bottom surface; forming a first wiring layer made of a first metal on the bottom surface and side surfaces of the opening portion surrounding a surface of the insulating resin opposite to the main surface of the substrate, the first wiring layer having a bottom portion formed on the bottom surface of the opening portion and side portions formed on the side surfaces, the bottom portion having a thickness greater than a thickness of at least one of the side portions; and cutting the insulating resin and the first wiring layer such that the insulating resin and the first wiring layer are exposed, wherein the thickness of the at least one of the side portions of the first wiring layer ranges approximately 20 nm-50 nm, and the thickness of the bottom portion of the first wiring layer ranges approximately 200 nm-300 nm.