Writing system and method for phase change memory

摘要

An embodiment of a writing system for a phase change memory based on a present application is disclosed. The writing system comprises a first phase change memory (PCM) cell, a second PCM cell, a first writing circuit and a verifying circuit. The first writing circuit executes a writing procedure, receives and writes a first data to the first PCM cell. The verifying circuit executes a verifying procedure and the circuit further comprises a processing unit and a second writing circuit. The processing unit reads and compares the data stored in the second PCM cell with a second data. The second writing circuit writes the second data to the second PCM cell when the data stored in the second PCM cell and the second data are not matched.

主权项

1. A writing system for a phase change memory, comprising:
a first phase change memory (PCM) cell and a second PCM cell; a first writing circuit, executing a writing procedure, receiving and writing a first data to the first PCM cell; and a verifying circuit executing a verifying procedure, wherein the verifying circuit further comprises,
a processing unit reading and comparing the data stored in the second PCM cell with a second data, anda second writing circuit to write the second data to the second PCM cell when the data stored in the second PCM cell and the second data are not matched.