| 摘要 |
<p>The present invention provides a semiconductor device which includes a transistor including oxide semiconductor, and a resistance element including oxide semiconductor on the same substrate. The present invention provides a semiconductor device which includes a resistance element including a first oxide semiconductor layer covered with a nitride insulating layer including hydrogen, and a transistor including a second oxide semiconductor layer covered with an oxide insulating layer which has the same composition as the first oxide semiconductor layer and is different from the carrier density. Also, because a process for increasing the concentration of impurity is performed on the first semiconductor layer, the carrier density of the first semiconductor layer is higher than that of the second oxide semiconductor layer. Also, because a process is performed on the entire surface after the first semiconductor layer is processed to be an island shape, a region touching the nitride insulating layer and a region touching an electrode layer in a contact hole provided on the nitride insulting layer have the same conductivity.</p> |
