SEMICONDUCTOR DEVICE HAVING BALANCING CAPACITOR AND METHOD OF FORMING THE SAME

摘要

Multiple bit lines are formed inside cell blocks on a substrate. Multiple cell BC plugs are formed near a side surfaces of the bit lines. Formed are spacers inside a cell, air spacers, and spacers outside a cell between the bit lines and the cell BC plugs. Multiple balancing bit lines are formed inside balancing blocks on the substrate. Multiple balancing BC plugs are formed near side surfaces of the balancing bit lines. Formed are spacers inside balancing, and spacers outside balancing between the balancing bit lines and the balancing BC plugs. Some selected from the bit lines are connected to sense blocks, and the balancing bit lines are connected to the sense blocks.